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HV256
o Kit Demilable Ava
32-Channel High Voltage Amplifier Array
Features
32 independent high voltage amplifiers 300V operating voltage 295V output voltage 2.2V/s typical output slew rate Adjustable output current limit Internal closed loop gain of 72V/V 12M feedback impedance Layout ideal for die applications
Block Diagram
BYP-VPP BYP-VDD BYP-VNN To internal VPP bus To internal VDD bus To internal VNN bus Output Current Source Limiting for all HVOUT Output Current Sink Limiting for all HVOUT
RSOURCE
RSINK VPP
Application
MEMS (microelectromechanical systems) driver Piezoelectric transducer driver Optical crosspoint switches (using MEMS technology)
VDD
General Description
The Supertex HV256 is a 32-channel high voltage amplifier array integrated circuit. It operates on a single high voltage supply, up to 300V and two low voltage supplies, VDD and VNN. The input voltage range is from 0V to 4.096V. The internal closed loop gain is 72V/V giving an output voltage of 295V when 4.096V is applied. Input voltages of up to 5V can be applied but will cause the output to saturate. The maximum output voltage swing is 5V below the VPP high voltage supply. The outputs can drive capacitive loads of up to 3000pF. The maximum output source and sink current can be adjusted by using two external resistors. An external RSOURCE resistor controls the maximum sourcing current and an external RSINK resistor controls the maximum sinking current. The current limit is approximately 12.5V divided by the external resistor value. The setting is common for all 32 outputs. A low voltage silicon junction diode is made available to help monitor the die temperature.
VIN1
VDD VPP
VDD VPP
GND VNN Anode Cathode
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+
VIN31
+
HVOUT0
VIN0
+
VNN
71R R
HVOUT1 VNN 71R R
-
HVOUT31 71R R
HV256 Ordering Information
Device HV256 Maximum Output Voltage 295V Nominal Closed Loop Gain 72V/V Package Options 100 Lead MQFP HV256FG Die HV256X
Absolute Maximum Ratings*
VPP, High voltage supply VDD, Low voltage positive supply VNN, Low voltage negative supply VIN, Analog input signal Storage temperature range Maximum junction temperature 310V 8.0V -7.0V 0V to VDD -65C to 150C 150C
*Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Electrical Characteristics (Over operating conditions unless otherwise noted.)
Symbol Parameter Min Typ Max Units Condition
Operating Conditions
VPP V DD VNN IPP IDD INN TJ High voltage positive supply Low voltage positive supply Low voltage negative supply VPP supply current VDD supply current VNN supply current Junction temperature range -5.2 -10 125 125 6.0 - 4.5 300 7.5 -6.5 0.8 4.3 V V V mA mA mA
C
V PP=300V, All HVOUT=0V, No Load V DD = 6.0V to 7.5V VNN = -4.5V to -6.5V
High Voltage Amplifier
HVOUT VIN VINOS SR BW AO AV RFB CLOAD ISOURCE ISINK HVOUT voltage swing Input voltage range Input voltage offset HVOUT slew rate rise HVOUT slew rate fall HVOUT -3dB channel bandwidth Open loop gain Closed loop gain Feedback resistance from HVOUT to ground HVOUT capacitive load HVOUT sourcing current limiting range HVOUT sinking current limiting range 70 68.4 9.6 0 385 385 25 25 -80 -40
2
0 0 2.2 2.0 4.0 100 72.0 12
VPP-5 5.00 50
V V mV V/s V/s KHz dB Input referred. No Load No Load VPP=300V
75.6 3000
V/V K pF A A K K dB dB
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550 550
715 715 250 250
RSOURCE=25K RSINK=25K
External resistance range for setting current RSOURCE source limit RSINK C T DC PSRR External resistance range for setting current sink limit DC channel to channel crosstalk
Power supply rejection ratio for VPP, VDD, and VNN
HV256 Diode
Symbol
PIV VF IF TC
Parameter
Peak inverse voltage Forward diode drop Forward diode current VF temperature coefficient
Min
Typ
Max
5.0
Units
V V A
mV/C
Condition
cathode to anode If=100A, anode to cathode anode to cathode anode to cathode
0.60 100 -2.20
Power Up/Down Sequence
The device can be damaged due to improper power up / down sequence. To prevent damage, please follow the acceptable power up /down sequences and add two external diodes as shown in the diagram below. The first diode is a high voltage diode across VPP and VDD where the anode of the diode is connected to VDD and the cathode of the diode is connected to Vpp. Any low current high voltage diode such as a 1N4004 will be adequate. The second diode is a schottky diode across VNN and DGnd where the anode of the schottky diode is connected to VNN and the cathode is connected to DGnd. Any low current schottky diode such as a 1N5817 will be adequate.
VDD 1N4004 or similar VNN 1N5817 or similar
VPP
Acceptable Power Up Sequences 1) VPP or 1) VNN 2) VNN 2) VDD 3) VDD 3) VPP 4) Inputs & Anode 4) Inputs & Anode
PGND
Acceptable Power Down Sequences 1) Inputs & Anode or 1) Inputs & Anode 2) VDD 2) VPP 3) VNN 3) VDD 4) VPP 4) VNN
Pin Description
VPP BYP-VPP VDD BYP-VDD VNN BYP-VNN GND RSOURCE RSINK Anode Cathode VIN0 to VIN31 HVOUT0 to HVOUT31 High voltage positive supply. There are two pads. A low voltage 1.0 to 10nF decoupling capacitor across VPP and BYP-VPP is required. Analog low voltage positive supply. There are four pads. A low voltage 1.0 to 10nF decoupling capacitor across VDD and BYP-VDD is required. Analog low voltage negative suply. There are four pads. A low voltage 1.0 to 10nF decoupling capacitor across VNN and BYP-VNN is required. Device ground. There are four pads. External resistor from RSOURCE to VNN sets output current sourcing limit. Current limit is approximately 12.5V divided by Rsource resistor value. External resistor from RSINK to VNN sets output current sinking limit. Current limit is approximately 12.5V divided by RSINK resistor value. Anode side of a low voltage silicon diode that can be used to monitor die temperature. Cathode side of a low voltage silicon diode that can be used to monitor die temperature. Amplifie.r inputs Amplifier outpu.ts
3
A112304
HV256 Pin Configuration
100 1 81 80
100-Lead MQFP (top view)
30 31 50
51
Pin Configuration
P in # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
NC=No Connect.
Function HVOUT31 HVOUT30 HVOUT29 HVOUT28 HVOUT27 HVOUT26 HVOUT25 HVOUT24 HVOUT23 HVOUT22 HVOUT21 HVOUT20 HVOUT19 HVOUT18 HVOUT17 HVOUT16 HVOUT15 HVOUT14 HVOUT13 HVOUT12 HVOUT11 HVOUT10 HVOUT9 HVOUT8 HVOUT7
Pin # 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Function HVOUT6 HVOUT5 HVOUT4 HVOUT3 HVOUT2 HVOUT1 HVOUT0 VPP NC NC NC NC NC Gnd V NN NC VDD Gnd V NN VDD NC NC VIN0 VIN1 VIN2
Pin # 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75
Function VIN3 VIN4 VIIN5 VIN6 VIN7 VIN8 VIN9 VIN10 VIN11 VIN12 VIN13 VIN14 VIN15 VIIN16 VIN17 VIN18 VIN19 VIN20 VIN21 VIN22 VIN23 VIN24 VIN25 VIN26 VIN27
Pin # 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100
Function VIN28 VIN29 VIN30 VIN31 NC NC NC NC NC NC Gnd VDD VNN Gnd NC VDD Byp-VNN Byp-VDD VNN Anode Cathode RSINK RSOURCE Byp-VPP VPP
4
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HV256 Pad Configuration (Not Drawn to Scale)
5
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HV256 Pad Coordinates
Chip Size: 17004m x 5480m Center of die is (0,0)
Pad Nam e VP P HVOUT0 HVOUT1 HVOUT2 HVOUT3 HVOUT4 HVOUT5 HVOUT6 HVOUT7 HVOUT8 HVOUT9 HVOUT10 HVOUT11 HVOUT12 HVOUT13 HVOUT14 HVOUT15 HVOUT16 HVOUT17 HVOUT18 HVOUT19 HVOUT20 HVOUT21 HVOUT22 HVOUT23 HVOUT24 HVOUT25 HVOUT26 HVOUT27 X (m ) -8338.5 -7895.0 -7448.5 -7001.5 -6554.5 -6107.5 -5660.5 -5213.5 -4766.5 -4319.5 -3872.5 -3425.5 -2978.5 -2531.5 -2084.5 -1637.5 -1190.5 -743.5 -296.5 150.0 597.5 1044.5 1491.5 1938.5 2385.5 2832.5 3279.5 3726.5 4173.5 X( m ) 2708.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 2305.5 Pad Name HVOUT28 HVOUT29 HVOUT30 HVOUT31 VPP Byp-VPP RSOURCE RSINK Cathode Anode VNN Byp-VDD Byp-VNN VDD GND VNN VDD GND VIN31 VIN30 VIN29 VIN28 VIN27 VIN26 VIN25 VIN24 VIN23 VIN22 VIN21 X( m) 4620.5 5067.5 5514.5 5961.5 6659 7045 7489 7969 8366 8366 8047 8047 8047 8047 8047 8066.5 8066.5 7867.0 5043.5 4638.5 4233.5 3828.5 3423.5 3018.5 2613.5 2208.5 1803.5 1398.5 993.5 Y( m) 2305.5 2305.5 2305.5 2305.5 2709 2709 2709 2709 2709 2199 425.0 125.5 -345.5 -704.5 -1424.0 -1590.0 -1958.5 -2192.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 Pa d Name VIN20 VIN19 VIN18 VIN17 VIN16 VIN15 VIN14 VIN13 VIN12 VIN11 VIN10 VIN9 VIN8 VIN7 VIN6 VIN5 VIN4 VIN3 VIN2 VIN1 VIN0 VDD VNN GND VDD VNN GND X( m) 588.5 183.5 -221.5 -626.5 -1031.5 -1436.5 -2412.0 -2817 -3222 -3627 -4032 -4437 -4842 -5247 -5652 -6052 -6462 -6867 -7272 -7677 -8082 -8373 -8373 -8367 -8387 -8338.5 -8341.0 Y(m) -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2686.0 -2250.5 -1949.0 -1561. -1143.0 577.5 916.5
DOC #: DSFP-HV256
A112304
6
A112304
Package Outlines 100-LEAD MQFP PACKAGE OUTLINE (FG)
0.913 (23.2)
70
0.787 (20.0)
51
0.063 (1.6)
71
50
0.551 (14.0) 0.677 (17.2)
100
31
0.063 (1.6)
1 30
0.0256 (0.65)
0.0118 0.0031 (0.30 0.08)
0.0346 0.0059 (0.88 0.15)
0.1063 0.0079 (2.70 0.20) 0.0067 0.0024 (0.17 0.06) 0.0111 0.013 (2.825 0.325)
Note: Circle (e.g. B ) indicates JEDEC Reference.
Measurement Legend =
Dimensions in Inches (Dimensions in Millimeters)
Doc. #: DSPD-100MQFPFG
A052104
(c)2004 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 / FAX: (408) 222-4895 www.supertex.com

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